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| Datasheet File OCR Text: |
| YELLOW-GREEN 1. 2. 2.1 2.2 Item No.: 160260 This specification applies to GaP / GaP LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) p-Electrode p-Epitaxy GaP 265 120 270 n-Epitaxy GaP n-Epitaxy GaP n-Substrate GaP 265 n-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 2,25 max 2,50 10 Unit V A mcd nm Luminous intensity * Peak wavelength * On request, wafers will Brightness measurement 5. Packing IV IF = 20 mA 13,0 16,5 IF = 20 mA 568 P be delivered according to luminous intensity classes at OSA on gold plate Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 160260
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